Rad-hard transistors for space use developed by industry-education teamNews
June 20, 2022
INDEPENDENCE, Mo. Engineering firm Intellectual Property Developers has introduced, together with a team from Auburn University, technology that uses zinc oxide thin-film transistors for use in radiation-hardened electronics applications in space, nuclear power facilities, high-altitude aviation, and other radiation-heavy environments.
The company's announcement of its ZnO radiation-hardened thin-film transistors states that the part is radiation-hardened using gamma rays and that the ZnO part enables reduced volume, mass, and power consumption that can operate in extreme temperature ranges.
The company has completed a two-year research project that it says shows that ZnO transistors are working well under exposure in difficult radiation situations and has been approved for a patent for the ZnO technology by the U.S. Patent and Trademark Office.