High-performing RF switch introduced at IMS 2020 by Tower SemiconductorNews
August 04, 2020
INTERNATIONAL MICROWAVE SYMPOSIUM 2020. Tower Semiconductor (Migdal Haemek, Israel) introduced a new radio frequency (RF) switch technology aimed at the high-performance and 5G RF switch markets at the virtual International Microwave Symposium 2020.
According to a statement from the company, the new switch technology enables more efficient, novel RF system architectures in applications including mobile, base-station and mmWave communications.
This new switch technology is capable, the company says, of speeds of R<on> x C<off> of under 10 femtoseconds vs. the more usual 70-100 femtoseconds. The switch performs over an extremely wide range of frequencies, which enables extremely low insertion loss and very small device size. In addition, the nonvolatile switch consumes no energy when in the on-state or off-state, which enables use in power- and battery-sensitive applications.