Military Embedded Systems
Topic: GaN
News
RF sensors to get GaN boost under DARPA, Raytheon agreement
November 21, 2023
ANDOVER, Mass. Raytheon won a four-year, $15 million contract from DARPA [the U.S. Defense Advanced Research Projects Agency] to increase the electronic capability of radio frequency (RF) sensors using high-power-density gallium nitride (GaN) transistors.
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