GaN power amplifier for electronic warfare systems released by Analog Devices
NewsNovember 26, 2025
WILMINGTON, Massachusetts. Analog Devices introduced the ADPA1112 gallium nitride (GaN) power amplifier for applications spanning 1 GHz to 22 GHz, targeting electronic warfare and test systems, the company announced in a statement.
The ADPA1112 delivers saturated output power of 42 dBm between 8 GHz and 16 GHz, with 14 dB power gain and 25% power added efficiency (PAE), the company says. The device uses 50 ohm matched, AC-coupled radio-frequency (RF) input and output ports to ease integration into wideband front ends, the statement reads. According to the company, the design supports a supply voltage (VDD) of 28 V and a quiescent drain current of 600 mA set through a gate control pin.
Fabricated on a GaN process, the amplifier operates across a temperature range from -40°C to +85°C, the company says. The part includes an integrated RF power detector for monitoring output power and an output third-order intercept point (OIP3) of 44 dBm between 8 GHz and 16 GHz, according to the statement. Analog Devices positions the ADPA1112 for mission-focused subsystems in electronic warfare and broadband test and measurement equipment.
