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Infineon Technologies

Infineon Technologies
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Q & A: Military rad-hard designs for space … and beyond -- a conversation with Sean D'Arcy and Josh Broline - Story

June 20, 2024

As space becomes the next domain for weapons and military threats, designers of radiation-hardened electronics are seeing more requirements for greater radiation-resistant components. In this conversation with Sean D’Arcy, Senior Director, Aerospace and Defense/IR HR at Infineon Technologies and Josh Broline, Senior Director of Marketing and Applications at Renesas, we discuss this challenge as well as the hottest applications for military space, the use of commercial off-the-shelf (COTS) components, and if open architectures may be leveraged in spacecraft designs.

Radar/EW

Robust power for RF/µW hybrid and digital phased arrays - Story

February 13, 2024

Beamforming and beam-steering technologies used in military applications have seen significant advances, especially when coupled with the emergence of 5G communications and commercial space data communications. This progress led to the introduction of active electronically scanned array (AESA) and/or phased-array systems, which are now more affordable and available in full digital and/or hybrid configuration. The majority of the active spectrum is now covered by these systems, making them suitable for use in radar, electronic warfare (EW), and various military communications systems.

Radar/EW

Infineon’s industry first space-qualified serial interface F-RAM provides 2 Mb density non-volatile storage for extreme environments - Press Release

April 15, 2022

Munich, Germany – 14 April 2022 – Infineon Technologies LLC, part of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), today announced the availability of the space industry’s first radiation-hardened (rad hard), serial interface Ferroelectric RAM (F-RAM) for extreme environments. The new devices deliver unsurpassed reliability and data retention and are more energy efficient than non-volatile EEPROM and serial NOR Flash devices for space applications.

Radar/EW

Thermally enhanced high-power RF for amplifier applications - Product

June 02, 2015
Engineers at Infeon have designed a LDMOS field-effect transistor (FET) designed for use in radar power-amplifier applications in the 1,200 to 1,400 MHz frequency band. Dubbed PTVA127002EV, it features high gain and thermally enhanced package with bolt-down flange.
Comms

Rad-hard, power IC supplier, International Rectifier, acquired by Infineon Technologies - News

January 15, 2015
EL SEGUNDO, Calif. Officials at Infineon Technologies AG in Munich, Germany announced that the company has completed its purchase of radiation-hardened (rad-hard), power semiconductor provider International Rectifier, in El Segundo, Calif., for about $3 billion.