The space and defense industries face the critical challenge of delivering enhanced compute power in compact, efficient packages without compromising reliability or performance. In defense-related applications, in-orbit computing is the backbone of rapid-response superiority, enabling real-time imaging and communication. Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are emerging as a transformative technology for these high-reliability sectors.

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Radiation-tolerant and radiation-hardened components used in space systems must meet stringent radiation, temperature, and mechanical tests in order to succeed in mission-critical applications. Along with resilience, long-term cost effectiveness is one of the advantages of radiation-tolerant and radiation-hardened devices, as their use reduces the risk of mission failures and guarantees against the need for replacement and repair.

MUNICH. Infineon Technologies announced the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, aimed at use in harsh space environments.